Realizes Top Class1 Low On Resistance Performance
TOKYO — (BUSINESS WIRE) — July 17, 2013 —
Toshiba
Corporation (TOKYO:6502) today announced that it has launched the 4th
generation of its super junction MOSFETs, the "DTMOS IV" series of 650V
devices. The "TK14A65W" has been launched as the initial product in the
series and full-scale mass production is scheduled to start in August,
2013.
Using the latest single epitaxial process, the series reduces
the Ron·A (on resistance per area) by approximately 50%2
compared to existing 650V "DTMOS II" series. This allows a line-up of
small packages, contributing improved power efficiency and downsizing of
products into which they are integrated.
Toshiba 650V system DTMOS IV series, "TK14A65W" (Photo: Business Wire)
|
Main Specifications |
||||||||||||
|
Part
|
Package |
Absolute Maximum
|
RDS(ON) Max
(Ω) |
Qg
Typ. (nC) |
Ciss
Typ. (pF) |
|||||||
| VDSS (V) | ID (A) | VGS=10V | ||||||||||
| TK14A65W | TO-220SIS | 650 | 13.7 | 0.25 | 35 | 1300 | ||||||
