Line-up expanded for high-power dissipation packages
TOKYO — (BUSINESS WIRE) — July 28, 2013 — Toshiba Corporation (TOKYO:6502) today announced that it has launched ultra-compact MOSFETs for the switches of high-current charging circuits, including 2 cell batteries, of mobile devices such as smartphones and tablets.
Toshiba's Ultra-compact MOSFETs for High-current Charging Circuits of Mobile Devices (Photo: Business Wire)
As additional functions are added to mobile devices, such as smartphones and cellular phones, tablets and notebook PCs, and as more demands are made on their batteries, efforts continue to boost charge density and to improve the user experience by significantly increasing the charging current to cut charge times. The new ultra-compact "SSM6J781G" and "SSM6J771G" are Toshiba's latest additions to its high-current MOSFET line-up of high-power dissipation packages. Mass production shipment starts from today.
Applications
High-current charging
switches for mobile devices like smartphones and cellular phones,
tablets and notebook PCs.
Recommended Circuits
1. High-side
switch (Pch)
2. High-side switch combining boost control LSI (Nch)
3.
Control switch for low-side battery protection (Nch)
Key Features
1. High-current
2.
Low ON-resistance
3. Low capacitance
4. Small package (1.5 x
1.0 mm; WCSP6C)
5. High-power dissipation (High PD)
Main Specifications
|
Nch MOSFET |
||||||||||||
| Part number |
VDSS
(V) |
VGSS
(V) |
ID(DC)
(A) |
RDS(ON) typ. (mΩ) |
PD
(W) |
|||||||
| VGS = 2.5V | VGS = -4.5V | |||||||||||
|
SSM6K781G |
12 | ±8 | 7 | 17.9 | 14.4 | 1.2 | ||||||
|
Pch MOSFET |
||||||||||||
| Part number |
V DSS
(V) |
V GSS
(V) |
I D(DC)
(A) |
R DS(ON) typ. (mΩ) |
P D
(W) |
|||||||
| V GS = -4.5V | V GS = -8.55V | |||||||||||
| SSM6J771G | -20 | ±12 | -5 | 26 | 23 | 1.2 | ||||||
