- Professor Lu is an expert in the commercialization of memory technology based on resistive switching
- Winner of the National Science Foundation Career Award in 2010
SANTA CLARA, Calif. — (BUSINESS WIRE) — July 13, 2015 — Crossbar, Inc., the RRAM technology leader, announced today that its Chief Scientist and Co-founder, Dr. Wei D. Lu, will be presenting at the “Emerging Generation Memory Technology: Update on 3D NAND, MRAM and RRAM” session at SEMICON West in San Francisco, CA, on Tuesday, July 14.
Dr. Lu’s presentation is titled “Memory Meets Storage”. It will explore how the company is commercializing Resistive RAM (RRAM) solutions, paving the way for a terabyte of storage-on-a-chip to become a reality.
Planar NAND Flash memory technology is running out of steam as it reaches scaling limits at the 1Y node. Resistive memory technologies are the leading alternative for future storage solutions. They provide superior performance characteristics, including better read latencies, write throughput, endurance, retention, density and cost.
At SEMICON West, Dr. Lu will discuss the benefits of Crossbar’s 1T1R and 1TnR RRAM technologies. He will also show how leading-edge CMOS logic foundries can license and manufacture Crossbar’s 3D RRAM to build competitive stand-alone memory chips or integrate non-volatile memory IP blocks at the same process nodes as micro-controllers (MCU), Systems-on-Chip (SoC) and Field Programmable Gate Arrays (FPGA).
Presentation Title: Crossbar RRAM – Enabling A New Era Of Storage Innovation
Speaker: Dr. Wei Lu, Chief Scientist and Co-founder, Crossbar, Inc.
When: Tuesday, July 14th at 1:30 pm
Track: Emerging Generation Memory Technology: Update on 3D NAND, MRAM and RRAM
Session Number: NTXSPT2
Where: SEMICON West, Moscone Convention Center, San Francisco, CA
About Dr. Wei Lu
Dr. Wei D. Lu is co-founder and chief scientist of Crossbar, where he focuses on the commercialization of resistive-switching device based memory technology. He specializes in the research and development of silicon-based, CMOS compatible, high-performance, non-volatile crossbar memory. His achievements include the first integration of crossbar RRAM array with CMOS circuitry without using external transistor or diode as selectors. He also was first to demonstrate that resistive switching devices can effectively emulate synapse for neuromorphic system applications. He won the NSF Career Award in 2010 and the Wilson Award in 2003. He has published 50 journal papers that have been cited over 4,000 times by peer researchers.
Dr. Lu is an active member of the Emerging Research Device working group of ITRS and co-editor-in-chief of Nanoscale, a flagship journal of the Royal Society of Chemistry. He has also served as a reviewer and panelist for NSF, DOE, ARO, AFOSR and over 30 other scientific journals.
Dr. Lu has a Ph.D. in Physics from Rice University in Texas, and a Bachelor of Science in Physics from Tsinghua University in China.
About Crossbar, Inc.
Crossbar Inc. is the leader in RRAM technology, widely accepted as the front-runner to replace traditional Flash technology in future storage systems. Delivering terabyte storage on a postage stamp- sized chip, with power low enough for massive adoption throughout the Internet of Things, Crossbar RRAM is easy to tailor for a broad range of applications. From embedded memory on SOCs for wearables, to very high density SSDs for cloud data centers, Crossbar is ushering in a new era of storage innovation. For more information, visit Crossbar-Inc.com.
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