The potential energy efficiency savings from the adoption of GaN power semiconductor devices has led to significant research and development that is now beginning to be realized in commercially available devices. Today, there are only a few players selling Power GaN products (Infineon/IR, EPC, GaN Systems, Transphorm) and the market is still small, estimated at $10M in 2015 in Yole Développement's July 2015 GaN and SiC devices for power electronics applications' report. But the ramp-up will be quite impressive, starting in 2016, at an estimated 93% CAGR through 2016-2020, with an estimated 2020 device market size of more than $300M in the baseline nominal' scenario.
The GaN power industry is consolidating in preparation for this significant growth, and GaN technology is spreading across the value chain. This can been seen in recent mergers and acquisitions (Infineon/IR, Transphorm/Fujitsu's GaN Power Conversion business), license agreements (Infineon/Panasonic, Transphorm/Furukawa) and the will of several firms to move onto the mass production stage (Transphorm/Fujitsu). As GaN power devices are now poised for rapid market adoption, a strong intellectual property (IP) position is essential for companies to grow their GaN business. In today's Power GaN market, it is crucial to understand the global patent landscape through in-depth analyses.
This enables you to anticipate changes, harvest business opportunities, mitigate risks and make strategic decisions to strengthen your market position and maximize return on your IP portfolio.
Key Topics Covered:
1. The authors
2. Scope of the report
3. Key features of the report
4. Objectives of the report
5. Methodology
6. Patent search strategy
7. Patent segmentation
8. Summary
9. Introduction
10. Noteworthy news
11. IP overview
12. Patent segmentation
13. Focus on key technology segments
14. Focus on key power GaN IP players
15. Power GaN IP profile of key players
- Alpha & Omega Semiconductor
- Arkansas Power
- Avogy
- Cree
- Daikin Industries
- Delta
- Dowa Electronics Materials
- EpiGaN
- ExaGaN
- Fairchild
- Freescale
- Fuji Electric
- Fujitsu
- Furukawa Electric
- GaN Systems
- General Electric
- LG Electronics
- MicroGaN
- Microsemi
- Mitsubishi Electric
- Motor
- NXP
- Nissan
- STMicroelectronics
- Samsung
- Sanken
- Semiconductor
- Seoul Semiconductor
- Sharp
- Sumitomo Electric
- TSMC
- Triquint
- VisIC
- Vishay
For more information visit http://www.researchandmarkets.com/research/t9jwqb/gan_devices_for
Media Contact:
Laura Wood, +353-1-481-1716, Email Contact
To view the original version on PR Newswire, visit: http://www.prnewswire.com/news-releases/gan-devices-for-power-electronics-patent-investigation-analysis-300139816.html
SOURCE Research and Markets
| Contact: |
| Research and Markets
Web: http://www.researchandmarkets.com |
