This 55nm eFlash-based ASIC solution consists of Faraday's PowerSlash™ library and memory IP with Turbo Mode feature to accelerate device performance; Faraday also provides versatile interface IPs and the Uranus™ SoC development platform to speed-up the development of the SoC silicon. In addition to the 55nm design wins, Faraday's eFlash solution has been implemented in touch panels, factory automation, and automotive appliances to address the ever-expanding market.
"In order to meet the growing demand for advanced MCUs, Faraday has readied the new migration path with the 55nm eFlash-based ASIC solution," said Steve Wang, President of Faraday. "We have abundant experience and knowledge to implement our ASIC solution at UMC's fab, helping obtain better yield improvement for the eFlash blocks. By utilizing this 55nm solution, we are confident that we can assist our customers to seize business opportunities in the market with cost advantages and faster time-to-market."
About Faraday Technology Corporation
Faraday Technology Corporation (TWSE: 3035) is a leading ASIC design service and IP provider. The broad silicon IP portfolio includes I/O, Cell Library, Memory Compiler, ARM-compliant CPUs, DDR2/3/4, low-power DDR1/2/3, MIPI, V-by-One, MPEG4, H.264, USB 2.0/3.1 Gen 1, 10/100/1000 Ethernet, Serial ATA, PCI Express, and programmable SerDes, etc. Headquartered in Taiwan, Faraday has service and support offices around the world, including the U.S., Japan, Europe, and China.
For more information about Faraday, please visit: www.faraday-tech.com
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SOURCE Faraday Technology Corporation
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