Seven D2PAK Surface Mount Devices Provide Optimal Flexibility
July 26, 2022 - Qorvo® (Nasdaq:QRVO) today announced seven
750V silicon carbide (SiC) FETs in the surface mount D2PAK-7L package. With this package option, Qorvo’s SiC FETs are tailored for the rapidly growing applications of onboard chargers, soft-switched DC/DC converters, battery charging (fast DC and industrial) and IT/server power supplies. They deliver an optimal solution for high-power applications that require maximum efficiency, low conduction losses and excellent cost effectiveness in a thermally enhanced package.
Highlighted by the industry’s lowest RDS(on) of 9 milliohms (mohms) at 650/750V, the Gen 4
UJ4C/SC series is rated at 9, 11, 18, 23, 33, 44 and 60 mohms. This wide selection provides engineers with more device options, enabling greater flexibility to achieve an optimum cost/efficiency balance while maintaining generous design margins and circuit robustness. Leveraging a unique cascode SiC FET technology in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET, these devices deliver a best-in-class RDS x A figure of merit, resulting in the lowest conduction losses in a small die.
Anup Bhalla, chief engineer at UnitedSiC (now Qorvo), said, “The D2PAK-7L package reduces inductance from compact internal connection loops which â”� along with the included Kelvin source connection â”� results in low switching loss, enabling higher frequency operation and improved system power density. These devices also feature silver-sinter die attach, resulting in very low thermal resistance for maximum heat extraction on standard PCBs as well as IMS substrates with liquid cooling.”
Pricing (1000-up, FOB USA) for the new 750V Gen 4 SiC FETs in the D2PAK-7L package ranges from $3.50 for the UJ4C075060B7S to $18.92 for the UJ4SC075009B7S. All devices are available from authorized distributors.
To learn more about how the UnitedSiC (now Qorvo) UJ4C/SC Gen 4 SiC FET series is delivering industry-best performance Figures of Merit that lower conduction losses and increase efficiency at higher speed, all while improving overall cost effectiveness, please visit
https://unitedsic.com/group/uj4c-sc/. To download a copy of Qorvo’s SiC FET User Guide, click
here.
About Qorvo
Qorvo (Nasdaq:QRVO) makes a better world possible by providing innovative Radio Frequency (RF) solutions at the center of connectivity. We combine product and technology leadership, systems-level expertise and global manufacturing scale to quickly solve our customers’ most complex technical challenges. Qorvo serves diverse high-growth segments of large global markets, including advanced wireless devices, wired and wireless networks and defense radar and communications. We also leverage unique competitive strengths to advance 5G networks, cloud computing, the Internet of Things, and other emerging applications that expand the global framework interconnecting people, places and things. Visit
www.qorvo.com to learn how Qorvo connects the world.
Qorvo is a registered trademark of Qorvo, Inc. in the U.S. and in other countries. All other trademarks are the property of their respective owners.
PR Contact:
Megan King
megan.king@publitek.com
+44 (0)7970167215
