Leti Devices Workshop, an Annual IEDM Feature for Registered Guests, Will Cover ‘From Materials to System Innovations, Shaping the Future of Global Connectivity’
GRENOBLE, France – Nov. 7, 2024 – CEA-Leti will highlight its most recent research advances in several fields at the 2024 International Electron Devices Meeting (IEDM), Dec. 7-11, at the Hilton San Francisco Union Square. Presentations include three R&D firsts:
- ferro-based memory scaling integrated into the back-end-of-line (BEOL) at the 22nm FDSOI technology node
- an integrated phase modulator and sensor (IPMS) offering improved scalability, compactness, and intrinsic optical alignment for digital optical phase conjugation (DOPC) applications, and
- the first adaptation of the forward-forward algorithm for resistive memory.
"CEA-Leti, together with its academic and industrial partners, will present cutting-edge results in the fields of low-power components, quantum technologies, RF, heterogeneous integration, emerging memories, and new computing paradigms,” said Thomas Ernst, scientific director, CEA-Leti.
CEA-Leti Papers
- “A 58×60 π/2-Resolved Integrated Phase Modulator And Sensor With Intra-Pixel Processing”, by Arnaud Verdant, Session 8.1: Monday, Dec. 9 @ 1:35 p.m. (Continental 7-9)
- “CMOS compatible 200 mm GaN-on-Si HEMTs for RF switch applications with 36 dBm CW power handling and 200 fs RonCoff”, by Luca Lucci, Session 9.4: Monday, Dec. 9 @ 2:50 p.m. (Imperial A)
- “FDSOI Platform for Quantum Computing”, a collaborative paper with Bruna Paz of Quobly, Session 10.6: Monday, Dec. 9 @ 4:05 p.m. (Imperial B)
- “Hf0.5Zr0.5O2 FeRAM scalability demonstration at 22nm FDSOI node for embedded applications”, by Simon Martin, Session 11.2: Tuesday, Dec. 10 @ 9:30 a.m. (Grand Ballroom A)
- “Edge Continual Training and Inference with RRAM-Gain Cell Memory Integrated on Si CMOS”, a collaborative paper with Shuhan Liu of Stanford University, Session 15.3: Tuesday, Dec. 10 @ 9:55 a.m. (Continental 5)
- “Forward-Forward Learning Exploiting Low-Voltage Reset of RRAM”, a collaborative paper with Bastien Imbert of Aix-Marseille University / CNRS, Session 13.4: Tuesday, Dec. 10 @ 10:45 a.m. (Continental 1-3)
- “Fine characterization and Modeling of the Frequency Dependence of TDDB in RF domain (F>10GHz)”, by Alexis Divay, Session 34.7: Wednesday, Dec. 11 @ 12 p.m. (Continental 5)
This year’s theme for this annual event at IEDM’s December conference is From materials to system innovations, shaping the future of global connectivity. It will begin at 5:30 PM, Dec. 8, at the Nikko Hotel, 3rd floor (directly opposite the Hilton hotel).
GlobalFoundries Vice President Product Management Jamie Schaeffer will deliver the keynote address on Future directions and applications of FD-SOI.
Presentations
- Thomas Signamarcheix, CEA-Leti Executive Vice President, Technology Planning & Strategic Programs, Chairman & Master of Ceremony
- FAMES Pilot Line: Towards energy-saving chips for digital, analog, RF: Jean-René Lèquepeys, Deputy CEO & CTO, CEA-Leti
- Boosting connectivity with advanced 3D heterogeneous integration: Xavier Garros Research Engineer, CEA-Leti
- 3D sequential devices: from energy efficient computing to RFIC analogue stacking: Daphnée Bosch , Research Engineer, CEA-Leti
- CMOS compatible GaN integration for enhanced connectivity and sensing: Luca Lucci, Research Engineer, CEA-Leti
- Key enabling technologies for next generation wireless systems in the mmw/sub-THz bands: Cédric Dehos , Expert in mmw architecture and system design, CEA-Leti
- Advanced RF filters for wireless communications: Sami Oukassi, Head of laboratory for RF and energy devices, CEA-Leti
A networking reception follows from 7-9 PM.
Register for Leti Devices Workshop here.
IEDM is the world’s pre-eminent forum for reporting technological breakthroughs in the areas of semiconductor and electronic device technology, design, manufacturing, physics, and modeling.
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