IRVINE, Calif., Jan. 20 /PRNewswire/ -- Toshiba America Electronic Components, Inc. (TAEC)* today introduced a new series of high-voltage pi-MOS VII MOSFETs that combine advanced process technology with a planar process to provide a wide selection of voltage and R(DS)(ON) ratings. Developed by Toshiba Corp., the new lineup addresses market requirements for AC/DC and ballast applications, achieved through use of the company's seventh generation pi-MOS process, a high level of cell integration and optimization of the cell design.
The first 13 devices in the pi-MOS VII series include seven 500V and six 600V MOSFETs, targeted for use in switched-mode power supplies, such as AC adapters in notebook and desktop computers, flat panel displays, and ballasts used in lighting. Additional products are planned that will extend the product family from 400V to 650V and provide a wide selection of electrical characteristics, including drain current, R(DS)(ON) and gate capacitance.
"As a result of the optimization of the cell design, Toshiba has been able to reduce gate charge and capacitance without losing low R(DS)(ON) characteristics," said Jeff Lo, business development manager, Discrete Power Devices, for TAEC. Compared to the company's previous generation pi-MOS VI MOSFETs, total gate charge has been reduced approximately 40 percent, output capacitance has been reduced 25 percent, reverse transfer capacitance has been reduced 60 percent and input capacitance has been reduced 10 percent(1).
The first seven 500V devices in the pi-MOS VII series provide a selection of drain current from 5 Amp (A) to 15A (max.), with a range of R(DS)(ON), gate charge and avalanche energy to meet various application requirements. (Please see specification tables below.) The TK5A50D features drain current of 5A and R(DS)(ON) of 1.5omega (max.); the 7A TK7A50D has R(DS)(ON) of 1.22omega (max.); the 8A TK8A50D has R(DS)(ON) of 0.85omega (max.); the 10A TK10A50D has R(DS)(ON) of 0.72omega (max.); the 12A TK12A50D has R(DS)(ON) of 0.52omega(max.); the 13A TK13A50D has R(DS)(ON) of 0.47omega (max.); and the 15A TK15A50D has R(DS)(ON) of 0.3omega (max.). These devices are packaged in Toshiba TO-220SIS packages, which are equivalent to industry standard TO-220F (isolated) packages, with dimensions of 10.0mm x 4.5mm x 17.8mm.
The initial pi-MOS VII series includes six 600V devices with drain current ranging from 3.5A to 13A (max.). A 3.5A device, the TK4A60DA, has R(DS)(ON) of 2.2omega (max.); the 6A TK6A60D has R(DS)(ON) of 1.25omega (max.); the 7.5A TK8A60DA has R(DS)(ON) of 1.0omega (max.); the 10A TK10A60D has R(DS)(ON) of 0.75omega (max.), the 11A TK11A60D has R(DS)(ON) of 0.65omega (max.); and the 13A TK13A60D has R(DS)(ON) of 0.43omega (max.).
Pricing and Availability
The new Toshiba pi-MOS VII high-voltage MOSFETs are available now. Prices in sample quantities start at $0.75.
Specifications for Toshiba Pi MOS 500V and 600V MOSFETs for AC-DC Power Supplies and Ballasts
Part Drain-Source Drain Drain-source Gate
Number Voltage Current ON resistance Charge,
V(DSS) I(D) R(DS)(ON) Q(g)
(max.) (max.) (max.)(2) (typ.)(3)
TK5A50D 500V 5A 1.5omega 11nC
TK7A50D 500V 7A 1.22omega 12nC
TK8A50D 500V 8A 0.85omega 16nC
TK10A50D 500V 10A 0.72omega 20nC
TK12A50D 500V 12A 0.52omega 25nC
TK13A50DA 500V 12.5A 0.47omega 28nC
TK15A50D 500V 15A 0.3omega 40nC
TK4A60DA 600V 3.5A 2.2omega 11nC
TK6A60D 600V 6A 1.25omega 16nC
TK8A60DA 600V 7.5A 1.0omega 20nC
TK10A60D 600V 10A 0.75omega 25nC
TK11A60D 600V 11A 0.65omega 28nC
TK13A60D 600V 13A 0.43omega 40nC
Specifications for Toshiba Pi MOS 500V and 600V MOSFETs for AC-DC Power Supplies and Ballasts (cont.)
Part Avalanche Avalanche Package Package
Number Energy Energy Toshiba Industry
Single Repetitive(5) Package/ Standard
Pulse(4) Dimensions Equivalent
(mm)
TO-220SIS TO-220F
TK5A50D 150mJ 3.5mJ 10 x 4.5 x 17.8 (Isolated)
TO-220SIS TO-220F
TK7A50D 129mJ 3.5mJ 10 x 4.5 x 17.8 (Isolated)
TO-220SIS TO-220F
TK8A50D 165mJ 4.0mJ 10 x 4.5 x 17.8 (Isolated)
TO-220SIS TO-220F
TK10A50D 264mJ 4.5mJ 10 x 4.5 x 17.8 (Isolated)
TO-220SIS TO-220F
TK12A50D 364mJ 4.5mJ 10 x 4.5 x 17.8 (Isolated)
TO-220SIS TO-220F
TK13A50DA 416mJ 4.5mJ 10 x 4.5 x 17.8 (Isolated)
TO-220SIS TO-220F
TK15A50D 542mJ 5.0mJ 10 x 4.5 x 17.8 (Isolated)
TO-220SIS TO-220F
TK4A60DA 158mJ 3.5mJ 10 x 4.5 x 17.8 (Isolated)
TO-220SIS TO-220F
TK6A60D 173mJ 4.0mJ 10 x 4.5 x 17.8 (Isolated)
TO-220SIS TO-220F
TK8A60DA 270mJ 4.5mJ 10 x 4.5 x 17.8 (Isolated)
TO-220SIS TO-220F
TK10A60D 363mJ 4.5mJ 10 x 4.5 x 17.8 (Isolated)
TO-220SIS TO-220F
TK11A60D 396mJ 4.5mJ 10 x 4.5 x 17.8 (Isolated)
TO-220SIS TO-220F
TK13A60D 511mJ 5.0mJ 10 x 4.5 x 17.8 (Isolated)
