TOKYO — (BUSINESS WIRE) — March 30, 2014 — Toshiba Corporation (TOKYO: 6502) today announced the launch of a new series of high-speed switching type super junction MOSFETs. The new “DTMOS IV-H series” is based on Toshiba’s fourth generation 600V super junction MOSFET “DTMOS IV series”. Mass production of the three products in the new series will start from the end of March.

Toshiba : 600V Super Junction MOSFET "DTMOS IV-H" High-Speed Switching Series (Photo: Business Wire)

While keeping the low ON-resistance level of conventional “DTMOS IV” products, the new series achieves faster switching performance by reducing the parasitic capacitance between gate and drain by 45%. This can also contribute to improved power efficiency in products. Additional package options are scheduled for the future.

Key Features of the New Product

1. Gate pattern optimization, resulting in a 45 percent reduction in gate-drain charge compared to the “DTMOS IV series”.

2. Reduction of the increase of ON-resistance at high temperatures due to the use of the single epitaxial process.

3. Low ON-resistance lineup

Applications

1. High efficiency switching power supplies for servers and telecom base stations

2. Power conditioners for photovoltaic inverters