(BUSINESS WIRE) — August 6, 2018 — Spin Transfer Technologies, Inc. (STT) will have several executive spokespeople chairing, presenting and participating in a number of sessions at the MRAM Developer Day and the Flash Memory Summit. STT is the leading developer of advanced STT-MRAM solutions for embedded SRAM and stand-alone DRAM applications.
MRAM Developer Day: |
At MRAM Developer Day, STT will be participating in two sessions: MRAM Application Briefs and MRAM in 2024 and How We Got There. During both sessions, STT executives will discuss how the data demand of new technologies combined with the pressing limitations of existing solid state memories is leading to the rise of pioneering replacement memories – including MRAM. Though MRAM has long been plagued with serious deficiencies regarding performance, retention and endurance, new innovations have solved these issues. For both sessions, STT’s Vice President of Product, Dr. Andrew Walker, will address MRAM’s current positioning to become the mainstream memory solution to supplant embedded SRAM and how MRAM will proceed towards DRAM replacement and new forms of Storage Class Memory. |
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SESSION DETAILS: |
Title: MRAM Application Briefs
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WHERE: |
Santa Clara Convention Center
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Flash Memory Summit: | During Flash Memory Summit, STT will participate in two separate tracks at the show: MRAM (New Memory Technologies Track) and Breaking Through Impenetrable Barriers (History Track). Dr. Walker will speak on developments in semiconductor storage technology that have led to the current state of the memory market and recent advancements in MRAM technology to improve its speed and endurance to levels competitive with SRAM and DRAM solutions. Dr. Walker will also discuss the origins of current market implementations of NVM, the rise of 3D NAND flash, and the development of alternative memories, such as MRAM, aimed at replacing embedded SRAM. | |
SESSION DETAILS: |
Title: NEWM-202B-1: MRAM (New Memory Technologies Track)
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WHERE: |
Santa Clara Convention Center
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About Spin Transfer Technologies
Spin Transfer Technologies, Inc. develops STT-MRAM technologies that combine advanced magnetics technologies, circuits and memory architectures to create the industry’s lowest-cost, highest-performance STT-MRAM memories. The company’s disruptive STT-MRAM solutions aim to replace embedded SRAM and DRAM. The company was established by Allied Minds and New York University. For more information, please visit www.spintransfer.com.
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Contact:
The Hoffman Agency
Justin Gillespie, 925-719-1097