New 12GB LPDDR4X joins 512GB eUFS to enable a seamless user experience in smartphones with multi-cameras, 2X screen sizes, and AI and 5G features

SEOUL, South Korea — (BUSINESS WIRE) — March 13, 2019 — Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the highest-capacity mobile DRAM – the industry’s first 12-gigabyte (GB) low-power double data rate 4X (LPDDR4X) package – optimized for tomorrow’s premium smartphones. Featuring higher capacity than most ultra-thin notebooks, the new mobile DRAM will enable smartphone users to take full advantage of all the features in next-generation smartphones.

This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20190313005622/en/

"With mass production of the new LPDDR4X, Samsung is now providing a comprehensive lineup of advanced memory to power the new era of smartphones, from 12GB mobile DRAM to 512GB eUFS 3.0 storage," said Sewon Chun, executive vice president of Memory Marketing at Samsung Electronics. "Moreover, with the LPDDR4X, we’re strengthening our position as the premium mobile memory maker best positioned to accommodate rapidly growing demand from global smartphone manufacturers."

Thanks to the 12GB mobile DRAM, smartphone makers can maximize the potential of devices that feature more than five cameras and ever-increasing display sizes as well as artificial intelligence and 5G capabilities. For smartphone users, the 12GB DRAM enables more fluid multitasking and faster searches as they navigate through a myriad of apps on ultra-large high-resolution screens. Also, the 1.1-millimeter thickness allows for even sleeker smartphone designs.

The 12GB capacity was achieved by combining six 16-gigabit (Gb) LPDDR4X chips based on the second-generation 10nm-class (1y-nm) process into a single package, providing more space for the smartphone battery. In addition, by using the company’s 1y-nm technology, the new 12GB mobile memory delivers a data transfer rate of 34.1GB per second while minimizing the increase in power consumption inevitably caused by a boost in DRAM capacity.

Since introducing 1GB mobile DRAM in 2011, Samsung continues to drive capacity breakthroughs in the mobile DRAM market, moving from 6GB (in 2015) and 8GB (2016) to today’s first 12GB LPDDR4X. From its cutting-edge memory line in Pyeongtaek, Korea, Samsung plans to more than triple the supply of its 1y-nm-based 8GB and 12GB mobile DRAM during the second half of 2019 to meet the anticipated high demand.

About Samsung Electronics Co., Ltd.

Samsung inspires the world and shapes the future with transformative ideas and technologies. The company is redefining the worlds of TVs, smartphones, wearable devices, tablets, digital appliances, network systems, and memory, system LSI, foundry and LED solutions. For the latest news, please visit the Samsung Newsroom at http://news.samsung.com.

[Reference] Samsung Mobile DRAM Timeline: Production/Mass Prod.

Date			Capacity			Mobile DRAM
Feb. 2019			12GB			1y-nm 16Gb LPDDR4X, 4266Mb/s
July 2018			8GB			1y-nm 16Gb LPDDR4X, 4266Mb/s
April 2018			8GB (development)			1x-nm 8Gb LPDDR5, 6400Mb/s
Sept. 2016			8GB			1x-nm 16Gb LPDDR4X, 4266Mb/s
Aug. 2015			6GB			20nm (2z) 12Gb LPDDR4, 4266Mb/s
Dec. 2014			4GB			20nm (2z) 8Gb LPDDR4, 3200Mb/s
Sept. 2014			3GB			20nm (2z) 6Gb LPDDR3, 2133Mb/s
Nov. 2013			3GB			2y-nm 6Gb LPDDR3, 2133Mb/s
July 2013			3GB			2y-nm 4Gb LPDDR3, 2133Mb/s
April 2013			2GB			2y-nm 4Gb LPDDR3, 2133Mb/s
Aug. 2012			2GB			30nm-class 4Gb LPDDR3, 1600Mb/s
2011			1/2GB			30nm-class 4Gb LPDDR2, 1066Mb/s
2010			512MB			40nm-class 2Gb MDDR, 400Mb/s
2009			256MB			50nm-class 1Gb MDDR, 400Mb/s

View source version on businesswire.com: https://www.businesswire.com/news/home/20190313005622/en/

---

Contact:

John Lucas
for Samsung Semiconductor, Inc.
Email Contact
925-872-2287