KAWASAKI, Japan — (BUSINESS WIRE) — July 12, 2023 — Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched the "TRSxxx65H series,” the company’s third and latest^[1] generation of silicon carbide (SiC) Schottky barrier diodes (SBDs) for industrial equipment. Volume shipments of the first 12 products, all 650V, start today, with seven products housed in TO-220-2L packages and five in DFN8×8 packages.

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Toshiba: TRSxxx65H series, 3rd generation 650V SiC Schottky barrier diodes. (Graphic: Business Wire)

The new products use a new metal in a third generation SiC SBD chip that optimizes the junction barrier Schottky (JBS) structure^[2] of the second generation products. They achieve industry-leading^[3] low forward voltage of 1.2V (Typ.), 17% lower than the 1.45V (Typ.) of the previous generation. They also improve the trade-offs between forward voltage and total capacitive charge, and between forward voltage and reverse current, which reduces power dissipation and contributes to high efficiency of equipment.

Notes:
[1] As of July 2023.
[2] JBS structure lowers the electric field at the Schottky interface and reduces leakage current.
[3] As of July 2023, Toshiba survey.

Applications

• Switching power supplies
• EV charging stations
• Photovoltaic inverters

Features

• Industry-leading^[3] low forward voltage: V_F＝1.2V (Typ.) (I_F=I_F(DC))
• Low reverse current:
  TRS6E65H I_R＝1.1μA (Typ.) (V_R=650V)
• Low total capacitive charge:
  TRS6E65H Q_C＝17nC (Typ.) (V_R=400V, f=1MHz)

Main Specifications