Expands line-up of low-voltage “U-MOS IX-H Series” MOSFETs

TOKYO — (BUSINESS WIRE) — December 8, 2016 — Toshiba Corporation’s (TOKYO:6502) Storage & Electronic Devices Solutions Company today expanded its “U-MOS IX-H Series” of low-voltage N-channel power MOSFETs with new 40V and 45V products delivering industry leading-class^[1] low on-resistance and high-speed performance. The new products —nine 40V and five 45V versions—are designed for industrial and consumer applications, including high-efficiency DC-DC converters, high-efficiency AC-DC converters, power supplies and motor drives. Shipments start today.

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Toshiba: 40V/45V N-Channel Power MOSFET with Industry's Leading-class Low On-resistance (Photo: Business Wire)

The new MOSFETs utilize Toshiba’s latest generation low-voltage trench structure U-MOS IX-H process to achieve the industry’s leading-class^[1] low on-resistance and high-speed performance. The new structure lowers the performance index for “R_{DS(ON) *} Q_sw”^[2], improving switching applications to a level surpassing current Toshiba products^[3]. Output loss is improved by the reduction of output charge, which can contribute to higher set efficiency. Furthermore, the cell structures used in the new MOSFETs are optimized to suppress spike voltage and ringing during switching, which can contribute to lowering set EMI.